Abstract
The amount of data being recorded by downhole drilling and measurement services is constantly increasing, because customers request more often images, comprehensive sensor data as well as determined raw values. Therefore, it is essential ensure huge data storage capabilities while operating within this high temperature (>150°C) and high vibration environment. Smaller silicon process structures of DIEs are necessary to fulfill the storage capability as well as the corresponding high-speed requirements. This leads to challenges, especially for high temperature applications with memory NAND flash technology that active cooling becomes imperative – here realized by using thermoelectric cooling.
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This work is licensed under a Creative Commons Attribution 4.0 License.
Recommended Citation
Baker Hughes Company, "Thermoelectric cooling of high temperature memory flash devices in multi-chip modules", Technical Disclosure Commons, (March 17, 2025)
https://www.tdcommons.org/dpubs_series/7915