Abstract
The present disclosure relates to silicon photonics and specifically an inclined metal transition on a Si platform for high bandwidth wire bonds. This includes a combination of metal traces on inclined cavity walls with a chip dicing plane going through the cavity. Also, this includes layer(s) of dielectric material(s) below the metal lines on the cavity wall and bottom to improve radio frequency (RF) performances, ensuring the transmission lines sit on a material with a low dielectric constant and dissipation factor, thereby reducing conductor and dielectric loss to improve performance. Further, there is thin cavity floor thickness to minimize the wire bond length to a printed circuit board (PCB). For an optical platform, the inclined metal interconnect scheme allows for improved performance to at least 75GHz (<1dB insertion loss (IL), <-10dB return loss (RL)) to support hundreds of gigabaud of bandwidth. This approach includes a lower cost and shorter lead times, by leveraging well known V-groove etch technologies already used in high volume applications. Also, this approach is an interconnect scheme enabling full-thickness dies, easing wafer handling and other processing issues.
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Recommended Citation
Anonymous, "Inclined Metal Transition on Si Platform for High Bandwidth Wire Bonds", Technical Disclosure Commons, (September 08, 2023)
https://www.tdcommons.org/dpubs_series/6236