Abstract
This specification formalizes the structural, electrical, and geometric design criteria for a High-Frequency Gallium Nitride (GaN)-Driven Concentric Interdigital Transducer (cIDT) Apparatus. Traditional solid-state lithium metal batteries suffer from systemic interfacial degradation, driven by localized non-linear ion crowding and stochastic dendritic nucleation at the solid-electrolyte interphase (SEI).
This apparatus resolves these bottlenecks by translating the abstract field equations of the Dimensionally Extended Holographic Projection (DEHP) model into a physical electro-mechanical boundary defense system. By generating high-velocity focused Surface Acoustic Waves (SAWs) directly across the SEI canvas, the device transforms a volatile, static boundary layer into a topologically protected, continuous cymatic fluid matrix. Operating at a native RF frequency of 13.56 MHz under a 42.0 Vpp punch, this apparatus enforces a strict Torsional Viscosity Governor (eta_t = 1.4204), successfully clamping localized boundary ion densities to a safe maximum of 0.0416 mA/cm² under hyper-velocity rapid-charging loads.
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.
Recommended Citation
Eckes, Christopher L., "TECHNICAL DISCLOSURE SPECIFICATION: HIGH-FREQUENCY GaN-DRIVEN CONCENTRIC TRANSDUCER APPARATUS FOR INTERFACIAL SOLITON RESTRUCTURING AND DENDRITE SUPPRESSION", Technical Disclosure Commons, ()
https://www.tdcommons.org/dpubs_series/11083