Abstract
This disclosure describes ultra-compact high-density metal resistors for use in semiconductor applications. Per techniques of this disclosure, one or more metal layers included in a wafer are connected in different configurations to implement high density resistors. Resistors thus configured can provide up to ten times the resistance density than foundry provided resistors. A first configuration uses M0 and M1 layers, while a second configuration uses M0 and M2 layers, and a third configuration uses M0 and stacked M2 layers. The configurations described herein can achieve the same resistance as foundry provided resistors with a significantly smaller, even 10X smaller area, enabling significantly higher density. Metal layer based resistors described herein are high density resistors that are suited for low current applications such as passive filters and always-on biasing.
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.
Recommended Citation
Zhang, Tong and Cancio, Jason, "Ultra-Compact High-Density Metal Resistor in Modern FinFET or GAA Process", Technical Disclosure Commons, (October 01, 2024)
https://www.tdcommons.org/dpubs_series/7389