This disclosure describes techniques to repair damage in microLED semiconductor chips. Hydrogen plasma treatment is utilized followed by high density nitrogen plasma treatment to repair damage to pixels that occurs during manufacture of the pixels. During the hydrogen plasma treatment, a hard mask is provided over the gallium nitride layer (GaN) to ensure that the plasma only reacts with the pixel side wall, and not with the upper surface of the GaN layer. The hydrogen based plasma treatment leads to deactivation of Mg doping at the edge of the mesa. The hydrogen plasma treatment is followed by high density remote nitrogen (N2) plasma treatment. The nitrogen plasma treatment leads to nitridation of the quantum wells (QW) and serves to compensate for nitrogen vacancies and to remove non-radiative recombination sites from QW areas. The techniques of this disclosure may be utilized with mesa processes as well as non-mesa processes.

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